VEEINK Men Letter Graphic Drawstring Waist Shorts

VEEINK Men Letter Graphic Drawstring Waist Shorts


Looking for a pair of stylish and comfortable shorts that you can wear all summer long? Look no further than VEEINK Men Letter Graphic Drawstring Waist Shorts! Made from a soft and lightweight fabric, these shorts are perfect for a day at the beach or a casual day out. Plus, the drawstring waist ensures a perfect fit every time. Pair them with a simple button up dress shirt and some VEEINK Men Tie-Dye Graphic T-Shirts and complete your look. VEEINK Letter Graphic Draw-string Waist Shorts measure 29″ in length and are designed to fit men’s sizes 30-42.The present invention relates to improvements in methods of manufacturing semiconductor devices. More particularly, the invention is concerned with a novel technique that is advantageously applicable to the manufacture of semiconductor IC devices incorporating memory cells, e.g., IC memory devices of the type including arrays of MOSFETs, each MOSFET having a plurality of bit lines and a plurality of pairs of bit lines that share a contact which is connected with one of the bit lines in series with a portion of the source region thereof. This technique is especially useful in the manufacturing of nonvolatile memories, particularly those operating at high speeds.
As is taught in U.S. Pat. No. 4,322,835 and Japanese Patent Laid-Open No. 51-123831, known semiconductor memories having arrays of MOSFETs with a plurality of bit lines and/or pairs of bit lines and a plurality/of pairs of diffusion bit lines that share a contact with one of the bit lines in series with a portion of the source regions of the MOSFETs offer a significant improvement in performance over alternative prior art structures. Particularly in semiconductor memories operating at high speed, this advantage manifests itself in lessening, if not totally eliminating, the need for high voltages for programming and erasing the memory cells which are generally accomplished by applying high voltages to bit lines associated with a plurality of MOSFETs that constitute a memory cell and a plurality of pairs of diffusion bit lines shared by these bit lines. Another advantage of these novel structures is that memory cells can be fabricated and operated at lower operating voltages.
Such memory arrays include two types of floating-gate memory cells. One type requires as many diffusion regions as bit lines and pairs of diffusion lines shared between bit lines. The other type of cell requires as many diffusion lines as bit lines and a single diffusion region shared among one bit line and a pair of diffusion bit lines sharing the one diffusion region. Both memory cell types have a drain region and a source region. The source region is used like a common potential line, as is the drain region, for each floating-gate memory cell in the

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