VEEINK Men Solid Drop Shoulder Tee

VEEINK Men Solid Drop Shoulder Tee


Looking for a relaxed and comfortable tee? Check out our VEEINK Men Solid Drop Shoulder Tee. Made from a soft and lightweight fabric, this tee is perfect for everyday wear. It features a relaxed fit, a crew neckline, and dropped shoulders for a relaxed and stylish look. Its drop shoulders give you added coverage, and will keep you looking cool and casual under all casual apparel! In addition to its stylish details, this tee pairs well with both casual and dressy apparel.

Veeink is the ideal fashion clothing company for active men. We are the world’s top designer and manufacturer of fitness apparel with our own line of branded fitness gear that allows us to make certain that we exceed our fitness customers’ needs. Our clothing line includes the popular VeeFoam, VeeNeck, VeeKnit, VeeRib, and our signature VeeRacer™ shoes. Veeink was founded by Chris Vee in 2012, and is headquartered in Orange County, California. For more information, please visit our website at: http://wwww.veeink.com/(1) Field of the Invention
This invention concerns the field of semiconductor devices, and more particularly concerns novel devices and processes for selectively doping portions of a doped layer to substantially increase the carrier concentration for a portion of the doped layer and the resistance thereof to increase as a function of distance from the active area of the diode.
(2) Prior Art
Several techniques are known for effecting the doping of the surface layer of a semiconductor layer with doping elements of appropriate conductivity type at a selected site on the layer in the interest of changing the conductivity thereof. This doping is usually accomplished through the use of doped contact windows or diffusion barriers extending from and surrounding the selected active area. In the simplest technique, the layer is first exposed to one or more doping species on the active surface. The doping is then allowed to diffuse to and form on the surface of the layer.
In an alternative doping scheme, a thin amorphous silicon overlayer is selectively doped with an appropriate dopant. The dopant-silicon overlayer is applied by a plasma deposition technique. This technique is employed to deposit doped crystalline silicon on, e.g, a germanium substrate to form a silicon-doped germanium solar cell.
In a third common technique, the dopant-containing source is applied only to those portions of the surface layer located immediately adjacent to the selected active area, or diffusion barrier. The source material is applied only to the active surface by plasma or molecular beam deposition techniques. The material is then allowed to remain stationary to effect diffusion into the layer.
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